Method for manufacturing semiconductor device

ABSTRACT

A method of manufacturing a semiconductor device is provided, in which after forming a gate stack and a first spacer thereof, a second spacer and a third spacer are formed; and then an opening is formed between the first spacer and the third spacer by removing the second spacer. The range of the formation for the raised active area  220  is limited by forming an opening  214  between the first spacer  208  and the third spacer  212 . The raised active area  220  is formed in the opening  214  in a self-aligned manner, so that a better profile of the raised active area  220  may be achieved and the possible shorts between adjacent devices caused by an unlimited manner may be avoided. Moreover, based on such a manufacturing method, it is easy to make the gate electrode  204  to be flushed with the raised active area  220 , and is also easy to implement the dual stress nitride process so as to increase the mobility of the device.

BENEFIT CLAIMS

This application is a US National Stage of International Application No.PCT/CN2010/077311, filed Sep. 26, 2010, which claims the benefit of CN201010142041.6, filed Apr. 7, 2010.

FIELD OF THE INVENTION

The present invention generally relates to a method of manufacturing asemiconductor device, and particularly, to a method of manufacturing asemiconductor device in which an raised source/drain structure on activedevice area is formed by self-alignment and self-limitation.

DESCRIPTION OF THE PRIOR ART

The raised active area of a device is formed by performing epitaxialgrowing on the entire active area, i.e. the source and drain area, inthe conventional manufacturing process. Such kind of process can reducethe resistivity of the device extension area and can more easily form acontact, so it is still desirable after entering 32 nm technology andbeyond generation. However, the raised active area may be grown acrossan isolation area to result in shorts between the adjacent devices,since the raised active area is formed through epitaxial growing on theentire active area without any restriction on the side of the isolationarea. Meanwhile, it is difficult to make the raised active area to be ofthe same height as the gate electrode, and it is difficult to realizethe dual stress nitride process that will increases the mobility in sucha process.

Therefore, there is a need to provide a method of manufacturing asemiconductor device in which the raised active area is formed byself-alignment and self-limitation.

SUMMARY OF THE INVENTION

The present invention provides a method of manufacturing a semiconductordevice. The method comprises: providing a semiconductor substrate;forming a gate stack on the semiconductor substrate, and forming a firstspacer on the sidewalls of the gate stack; forming a second spacer onthe sidewalls of the first spacer, and forming a third spacer on thesidewalls of the second spacer; removing the second spacer to form anopening; etching the semiconductor substrate through the opening to forma cavity within the substrate; forming an embedded active area in thecavity; and forming a raised active area within the opening; andsiliciding the device to form a metal silicide layer.

The present invention also provides a method of manufacturing asemiconductor device. The method comprises: providing a semiconductorsubstrate; forming a gate stack on the semiconductor substrate, andforming a first spacer on the sidewalls of the gate stack; etching partsof the semiconductor substrate on both sides of the gate stack to form acavity; forming an embedded active area in the cavity; forming a secondspacer on the sidewalls of the first spacer, and forming a third spaceron the sidewalls of the second spacer; removing the second spacer toform an opening; forming an raised active area within the opening; andforming a metal silicide layer by siliciding active area and/or gateelectrode of the device.

By means of the method of the present invention, the range and directionof the raised active area can be effectively restricted, thereby formingthe raised source/drain on active area on the active area in aself-aligned manner.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart of the method of manufacturing a semiconductordevice according to a first embodiment of the present invention;

FIGS. 2-11 schematically illustrate the respective manufacturing stagesof the semiconductor device according to the first embodiment of thepresent invention;

FIG. 12 is a flow chart of the method of manufacturing a semiconductordevice according to a second embodiment of the present invention; and

FIGS. 13-21 schematically illustrate the respective manufacturing stagesof the semiconductor device according to the second embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention generally relates to a method for manufacturing asemiconductor device. The following disclosure provides many differentembodiments or examples for realizing different structures of thepresent invention. To simplify the disclosure of the present invention,the components and configuration of specific examples are described inthe following. Of course, they are merely examples and are not intendedto limit the invention. In addition, reference numerals and/or letterscan be repeated in different examples in the present invention, and suchrepetition is for the purpose of concision and clarity, which in itselfdoes not discuss the relationship between the various embodiments and/orconfigurations. Furthermore, the present invention provides examples ofvarious specific techniques and materials, but those skilled in the artwill be aware of the applicability of other techniques and/or materials.Moreover, the structure in which the first element is “above” the secondelement as described below may comprise the embodiment where the firstand second elements are formed to be in direct contact, or it may alsocomprise the embodiment where a further element is formed between thefirst and second elements, in which case the first and second elementsmay not be in direct contact.

First Embodiment

According to the first embodiment of the present invention, reference isnow made to FIG. 1. FIG. 1 is a flow chart of the method ofmanufacturing a semiconductor device according to a first embodiment ofthe present invention. In step S101, a semiconductor substrate 200 isprovided, as shown in FIG. 2. In the present embodiment, the substrate200 comprises a silicon substrate (e.g. a wafer) in a crystal structure,but it may also comprise other basic semiconductors or compoundsemiconductors, such as Ge, SiGe, GaAs, InP, SiC or diamond, etc.According to the design requirements known in the prior art (e.g. ap-type substrate or an n-type substrate), the substrate 200 may comprisevarious doping configurations. In addition, the substrate 200 mayoptionally comprise an epitaxial layer which can be manipulated bystress to enhance its performance, and may comprise aSilicon-On-Insulator (SOI) structure.

In step S102, a gate stack 300 is formed on the semiconductor substrate200, and a first spacer 208 is formed on the sidewalls of the gate stack300, as shown in FIG. 2. The gate stack 300 generally comprises a gatedielectric layer 202 and a gate electrode 204. Preferably, the gatestack 300 may further comprise a gate cap 206 on top of the gateelectrode 204, which is generally made of nitride materials and used forprotecting the gate electrode 204 from being damaged in the subsequenceprocess steps. It is not intended to limit the structures, materials,forming processes and steps, and the like of the gate stack 300 in thepresent invention. In one embodiment, the gate stack 300 can be formedby forming a gate dielectric layer 202, a gate electrode 204 and a gatecap 206 in this order on the semiconductor substrate 200 and thenpatterning the gate dielectric layer 202, the gate electrode 204 and thegate cap 206 by a dry etching process or a wet etching process. The gatedielectric layer 202 may comprise, but not limited to, nitride, oxide,oxynitride or high-k dielectric materials, etc. The gate electrode 204may be a one-layer or multi-layer structure, and may comprise, but notlimited to, metals, metal compound, polysilicon, metal silicide or anycombination thereof. The first spacer 208 may be a one-layer ormulti-layer structure, and may be formed of a nitride or oxide material,or any combination thereof, or other appropriate materials. In oneembodiment, the first spacer 208 is a one-layer structure formed of anitride. In other embodiments, the first spacer 208 may also be atwo-layer structure or other multi-layer structures formed of nitrideand other material(s). These are merely examples and the presentinvention is not limited thereto. The gate stack 300 and the firstspacer 208 may be formed by conventional processes, such as thermaloxidization, sputtering, PLD, MOCVD, ALD, PEALD, or other appropriatemethods.

In step S103, a second spacer 210 is formed on the sidewalls of thefirst spacer 208, and a third spacer 212 is formed on the sidewalls ofthe second spacer 210, as shown in FIG. 3. The second spacer 210 may beformed of an oxide material. The third spacer 212 may be formed ofnitride material, and may be a one-layer or multi-layer structure. Inone embodiment, the third spacer 212 is a one-layer structure formed ofa nitride. In other embodiments, the third spacer 212 can also be atwo-layer structure or other multi-layer structures formed of nitrideand other material(s). These are merely examples and the presentinvention is not limited thereto. The second spacer 210 and the thirdspacer 212 may be formed by conventional deposition processes, such assputtering, PLD, MOCVD, ALD, PEALD or other appropriate methods.

In one embodiment, the first spacer 208, the third spacer 212 and thegate cap 206 are formed of nitride materials, and the second spacer 210is formed of an oxide material. The first spacer 208, the second spacer210, the third spacer 212 and the gate cap 206 can also be formed byselecting other appropriate materials according to the etchingselectivity or other process requirements. One skilled in the art shouldunderstand that they can be formed by many ways of combination ofmaterials, all of which can realize the present invention and thusshould be included in the protection scope of the present invention.

In step S104, the second spacer 210 is removed to form an opening 214,as shown in FIG. 4. The second spacer 210 has an etching selectivitydifferent from the first spacer 208, the third spacer 212 and the gatecap 206. The second spacer 210 can be selectively removed by means ofreactive ion etching (RIE) to form the opening 214.

In step S105, the semiconductor substrate 200 is etched through theopening 214 to form a cavity 216, as shown in FIG. 5. The cavity 216 isformed, through the opening 214, within the semiconductor substrate 200using a dry etching process or a wet etching process or a combinationthereof. The portion of the semiconductor substrate 200 under the thirdspacer 212 may be selectively retained or removed.

In step S106, an embedded active area 218 is formed in the cavity 216,as shown in FIG. 6. The embedded active area 218 generally refers to theembedded source area and the embedded drain area. The embedded activearea 218 may be formed by depositing SiGe, SiC or other appropriatematerials in the cavity 216 and at the same time performing in situdoping of p-type or n-type dopants into the embedded active area 218.

In step S107, a raised active area 220 is formed within the opening 214,as shown in FIG. 7. The raised active area 220 may be formed by theepitaxial growing method. The raised active area 220 is formed in theopening 214 in a self-aligned and self-limited manner, so that a betterprofile of the raised active area 220 may be achieved and possibleshorts between adjacent devices caused by an unlimited manner may beavoided.

Particularly, after the formation of the raised active area 220, thedevice may be planarized, for example, using Chemical MechanicalPolishing (CMP) or other etching methods, so as to make the gate stack300 to be flushed with the raised active area 220. In one embodiment,the entire gate cap 206 needs to be removed in order to realizeplanarization of the device, as shown in FIG. 8. In another embodiment,only a part of the gate cap 206 may be removed to realize planarizationof the device (not shown). The purpose is to make the gate stack 300 tobe substantially flushed with the raised active area 220, so therespective parts may be removed as appropriate. The present invention isnot limited to the above.

In step S108, the device is silicided to form a metal silicide layer222, as shown in FIG. 9. The metal silicide layer 222 may be formed in aself-aligned manner. First, such a metal as Co, Ni, Mo, Pt or W, etc. isdeposited on the device. Then annealing is performed and the metalreacts with any silicon surface of the device to form a metal silicide.The silicon surface can be single crystal silicon, or SiGe of the raisedactive area 220 and/or a polysilicon layer of the gate electrode 204 inthe gate stack 300 or the like. Afterwards, the unreacted metal isremoved to form a self-aligned metal silicide layer 222.

Particularly, after the formation of the metal silicide layer 222, thethird spacer 212 and part of the first spacer 208 may be selectivelyremoved by means of a dry etching process or a wet etching process, asshown in FIG. 10. Then a nitride material may be deposited by, but notlimited to, a Plasma-enhanced chemical vapor deposition (PECVD) methodto form a stress nitride layer 224, as shown in FIG. 11, therebyincreasing the mobility of the device.

The method for manufacturing the device by limiting the range offormation of the raised active area 220 by means of the opening 214between the first spacer 208 and the third spacer 212 is described asabove. In this embodiment, the embedded active area 218 is formed afterthe formation of the opening 214.

Second Embodiment

The following will only describe the aspects of the second embodimentwhich are different from the first embodiment, while the parts which arenot described should be considered as being carried out using the samesteps, methods or processes as those in the first embodiment and thuswill not be repeated here.

Referring to FIG. 12, FIG. 12 shows a flow chart of the method ofmanufacturing a semiconductor device according to the second embodimentof the present invention. Steps S201-S202 of the second embodimentaccording to the present invention are the same as steps S101-S102 inthe first embodiment, and are considered as being carried out by thesame steps, methods or processes as those in the first embodiment, andthus will not be repeated here.

In step S203, parts of the semiconductor substrate 200 on both sides ofthe gate stack 300 are etched to form a cavity 216, as shown in FIG. 13.The cavity 216 may be formed within the semiconductor substrate 200 bymeans of dry etching or wet etching or a combination thereof.

In step S204, an embedded active area 218 is formed in the cavity 216,as shown in FIG. 14. The embedded active area 218 generally refers tothe embedded source area and the embedded drain area. The embeddedactive area 218 may be formed by depositing SiGe, SiC or otherappropriate materials in the cavity 216, and at the same time performingin situ doping of p-type or n-type dopants into the embedded active area218.

In step S205, a second spacer 210 is formed on the sidewalls of thefirst spacer 208, and a third spacer 212 is formed on the sidewalls ofthe second spacer 210, as shown in FIG. 15. The second spacer 210 may beformed of an oxide material, and the third spacer 212 may be formed of anitride material. The second spacer 210 and the third spacer 212 may beformed by a conventional deposition process, such as sputtering, PLD,MOCVD, ALD, PEALD or other appropriate methods. The first spacer 208 andthe third spacer 212 may be a one-layer or multi-layer structure and maybe formed of a nitride material, an oxide material, or a combinationthereof, or other appropriate materials. In one embodiment, both thefirst spacer 208 and the third spacer 212 are a one-layer structureformed of a nitride. In other embodiments, the first spacer 208 and thethird spacer 212 can also be a two-layer structure or other multi-layerstructures formed of nitride and other material(s). These are merelyexamples and the present invention is not limited thereto.

In one embodiment, the first spacer 208, the third spacer 212 and thegate cap 206 are each made of a nitride material, and the second spacer210 is made of an oxide material. The first spacer 208, the secondspacer 210, the third spacer 212 and the gate cap 206 can also be formedby selecting other appropriate materials according to the etchingselectivity or other process requirements. One skilled in the art shouldunderstand that they can be formed by many combinations of materials,all of which can achieve the present invention and should be included inthe protection scope of the present invention.

In step S206, the second spacer 210 is removed to form an opening 214,as shown in FIG. 16. The second spacer 210 has a different etchingselectivity from the first spacer 208, the third spacer 212 and the gatecap 206, and can be selectively removed by means of RIE to form theopening 214. The first spacer 208, the second spacer 210, the thirdspacer 212 and the gate cap 206 can be formed by selecting appropriatematerials according to the etching selectivity or other processrequirements. One skilled in the art shall should understand that theycan be formed by many combinations of materials, all of which canachieve the present invention and should be included in the protectionscope of the present invention.

In step S207, a raised active area 220 is formed within the opening 214,as shown in FIG. 17. The raised active area 220 may be formed byepitaxial growing. The raised active area 220 is formed in the opening214 in a self-aligned and self-limited manner, so that a better profileof the raised active area 220 may be achieved, and the possible shortsbetween adjacent devices caused by an unlimited manner may be avoided.

Particularly, after the formation of the raised active area 220, thedevice may be planarized, for example, using Chemical MechanicalPolishing (CMP) or other etching methods, so as to make the gate stack300 to be flushed with the raised active area 220. In one embodiment,the entire gate cap 206 needs to be removed in order to realizeplanarization of the device, as shown in FIG. 18. In another embodiment,only a part of the gate cap 206 may be removed to realize planarizationof the device (not shown). The purpose is to make the gate stack 300 tobe substantially flushed with the raised active area 220, and thereforethe respective parts may be removed as required. The present inventionis not limited to the above.

In step S208, the device is slicided to form a metal silicide layer 222,as shown in FIG. 19. The metal silicide layer 222 may be formed in aself-aligned manner. First, such a metal as Co, Ni, Mo, Pt or W, etc. isdeposited on the device. Then annealing is performed and the metalreacts with any silicon surface contacting with it to form metalsilicide. The silicon surface can be the polysilicon layer of the raisedactive area 220 and/or the gate electrode 204 in the gate stack 300.Afterwards, the unreacted metal is removed to form a self-aligned metalsilicide layer 222.

Particularly, after the formation of the metal silicide layer 222, thethird spacer 212 and a part of the first spacer 208 may be selectivelyremoved by means of a dry etching process or a wet etching process, asshown in FIG. 20. Then a nitride material may be deposited by, but notlimited to, PECVD to form a stress nitride layer 224, as shown in FIG.21, thereby increasing the mobility of the device.

The above describes the device manufacturing method which limits therange of the formation for the raised active area 220 by means of theopening 214 between the first spacer 208 and the third spacer 212. Inthis embodiment, the opening 214 is formed after the formation of theembedded active area 218.

The present invention describes a device manufacturing method in which araised active area is formed in a self-aligned and self-limited manner.According to the present invention, the range of the formation for theraised active area 220 is limited by forming the opening 214 between thefirst spacer 208 and the third spacer 212. By forming the raised activearea 220 within the opening 214 in a self-aligned manner, a betterprofile of the raised active area 220 may be achieved and the possibleshorts between adjacent devices caused by the unlimited manner may beavoided. Moreover, based on such a manufacturing method, it is easy tomake the gate electrode 204 to be flushed with the raised active area220, and is also easy to implement the dual stress nitride process so asto increase the mobility of the device.

Although the example embodiments and the advantages thereof have beendescribed in detail, it shall be understood that various changes,substitutions and modifications can be made to said embodiments withoutdeparting from the spirit of the invention and the protection scopedefined by the appended claims. As for other examples, those ordinarilyskilled in the art shall easily understand that the sequence of theprocess steps may be changed without departing from the protection scopeof the present invention.

In addition, the application of the present invention is not limited tothe techniques, mechanisms, fabrication, compositions, means, methodsand steps in the specific embodiments described in the description. Onthe basis of the disclosure of the present invention, those ordinarilyskilled in the art shall easily understand that the existing or to bedeveloped techniques, mechanisms, fabrication, compositions, means,methods and steps, which have substantially the same function or achievesubstantially the same effect as the respective embodiments described inthe present invention, can also be used according to the presentinvention. Therefore, the appended claims intend to include suchtechniques, mechanisms, fabrication, compositions, means, methods andsteps in the protection scope thereof.

What is claimed is:
 1. A method of manufacturing a semiconductor device,comprising steps of: A. providing a semiconductor substrate; B. forminga gate stack on the semiconductor substrate, and forming a first spaceron a sidewalls of the gate stack; C. etching parts of the semiconductorsubstrate on both sides of the gate stack to form a cavity; D. formingan embedded active area in the cavity; E. forming a second spacer on asidewalls of the first spacer, and forming a third spacer on a sidewallsof the second spacer; F. removing the second spacer to form an opening;G. forming an raised active area within the opening; and H. silicidingthe semiconductor device to form a metal silicide layer.
 2. The methodaccording to claim 1, further comprising a step between step G and stepH: planarizing the semiconductor device to make the gate stack to besubstantially flushed with the raised active area.
 3. The methodaccording to claim 1, further comprising a step after step H: removingthe third spacer and parts of the first spacer, and forming a stressnitride layer to cover the semiconductor device.
 4. The method accordingto claim 1, wherein the first spacer, the third spacer and a gate capare each formed of a nitride material.
 5. The method according to claim1, wherein the second spacer is formed of an oxide material.
 6. Themethod according to claim 2, wherein the first spacer, the third spacerand a gate cap are each formed of a nitride material.
 7. The methodaccording to claim 3, wherein the first spacer, the third spacer and agate cap are each formed of a nitride material.
 8. The method accordingto claim 2, wherein the second spacer is formed of an oxide material. 9.The method according to claim 3, wherein the second spacer is formed ofan oxide material.